PART |
Description |
Maker |
VSSAF5N50 |
Trench MOS Schottky technology
|
Vishay Siliconix
|
STB30H100C |
Trench MOS Schottky technology
|
Sangdest Microelectroni...
|
IGB15N60T |
Low Loss IGBT in Trench and Fieldstop technology 在戴低损失和场终止IGBT技 1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
|
INFINEON[Infineon Technologies AG]
|
Q67040S4726 IGW75N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... Low Loss IGBT in Trench and Fieldstop technology
|
INFINEON[Infineon Technologies AG]
|
VFT760-M3-4W |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
6L45SB-SMBF |
Trench MOS Barrier Schottky Rectifier
|
DONGGUAN YOU FENG WEI E...
|
3L40AF-SMAF |
Trench MOS Barrier Schottky Rectifier
|
DONGGUAN YOU FENG WEI E...
|
TSF20U45C TSF20U60C |
Trench MOS Barrier Schottky Rectifier
|
Taiwan Semiconductor Company, Ltd
|
5L100-DO-201AD |
Trench MOS Barrier Schottky Rectifier
|
DONGGUAN YOU FENG WEI E...
|
VT10200C-E3 VFT10200C-E3 VBT10200C-E3 VIT10200C-E3 |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
V10WM100-M3I |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
TSF30H120C |
Trench MOS Barrier Schottky Rectifier
|
Taiwan Semiconductor Company, Ltd
|